Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4945598
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Funding
- Deutsche Forschungsgemeinschaft [LE3317/1-1]
- Multidisciplinary University Research Initiative from the Air Force Office of Scientific Research (AFOSR MURI Award) [FA9550-12-1-0488]
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The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration of III-V optoelectronic components into silicon-based technology. (C) 2016 AIP Publishing LLC.
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