Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition

(2011) C. Ratcliff et al.   APPLIED PHYSICS LETTERS

Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

(2011) S. Liebich et al.   APPLIED PHYSICS LETTERS

Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications

(2010) Tyler J. Grassman et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy

(2010) Yasufumi Takagi et al.   JOURNAL OF APPLIED PHYSICS

GaP-nucleation on exact Si (001) substrates for III/V device integration

(2010) Kerstin Volz et al.   JOURNAL OF CRYSTAL GROWTH

Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

(2009) T. J. Grassman et al.   APPLIED PHYSICS LETTERS