Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio

Published 2009 View Full Article

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Title
Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 1, Pages 013512
Publisher
AIP Publishing
Online
2009-01-10
DOI
10.1063/1.3064130
References
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