Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

(2018) Antonio Di Bartolomeo et al.   ADVANCED FUNCTIONAL MATERIALS

Electronic Transport in Two-Dimensional Materials

(2018) Vinod K. Sangwan et al.   Annual Review of Physical Chemistry

Significance of the gate voltage-dependent mobility in the electrical characterization of organic field effect transistors

(2018) Jong Beom Kim et al.   APPLIED PHYSICS LETTERS

Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

(2018) Mengqi Zeng et al.   CHEMICAL REVIEWS

2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection

(2018) Feng Wang et al.   CHEMICAL SOCIETY REVIEWS

Graphene-Silicon Schottky diodes for photodetection

(2018) Antonio Di Bartolomeo et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Hole-doping-induced half-metallic ferromagnetism in a highly-air-stable PdSe2 monolayer under uniaxial stress

(2018) Shi-Hao Zhang et al.   Journal of Materials Chemistry C

Transport and Field Emission Properties of MoS2 Bilayers

(2018) Francesca Urban et al.   Nanomaterials

A Physical Model for the Hysteresis in MoS2 Transistors

(2018) Theresia Knobloch et al.   IEEE Journal of the Electron Devices Society

The Role of Graphene and Other 2D Materials in Solar Photovoltaics

(2018) Sonali Das et al.   ADVANCED MATERIALS

Two-dimensional transistors beyond graphene and TMDCs

(2018) Yuan Liu et al.   CHEMICAL SOCIETY REVIEWS

3D Imaging and Manipulation of Subsurface Selenium Vacancies in PdSe2

(2018) Giang D. Nguyen et al.   PHYSICAL REVIEW LETTERS

Scattering Theory of Graphene Grain Boundaries

(2018) Francesco Romeo et al.   Materials

Activating transition metal dichalcogenides by substitutional nitrogen-doping for potential ORR electrocatalysts

(2018) Yashpal Singh et al.   ChemElectroChem

Controlled Synthesis of 2D Palladium Diselenide for Sensitive Photodetector Applications

(2018) Long-Hui Zeng et al.   ADVANCED FUNCTIONAL MATERIALS

Photoresponsive behavior of electron-beam irradiated MoS2 films

(2018) Hyun Ho Gu et al.   APPLIED PHYSICS LETTERS

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field-Effect Transistors

(2018) Filippo Giubileo et al.   Journal of Physical Chemistry C

Spin Polarization Properties of Pentagonal PdSe2 Induced by 3D Transition-Metal Doping: First-Principles Calculations

(2018) Xiuwen Zhao et al.   Materials

Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors

(2018) Francesca Urban et al.   Nanomaterials

PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics

(2017) Akinola D. Oyedele et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides

(2017) Mingu Kang et al.   NANO LETTERS

Electrical transport and persistent photoconductivity in monolayer MoS2phototransistors

(2017) Antonio Di Bartolomeo et al.   NANOTECHNOLOGY

Novel Pd2Se3 Two-Dimensional Phase Driven by Interlayer Fusion in Layered PdSe2

(2017) Junhao Lin et al.   PHYSICAL REVIEW LETTERS

The role of contact resistance in graphene field-effect devices

(2017) Filippo Giubileo et al.   PROGRESS IN SURFACE SCIENCE

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

(2017) Filippo Giannazzo et al.   Beilstein Journal of Nanotechnology

Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

(2017) Sohail Ahmed et al.   Nano-Micro Letters

Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

(2017) Sohail Ahmed et al.   Nano-Micro Letters

Strain-Modulated Electronic Structure and Infrared Light Adsorption in Palladium Diselenide Monolayer

(2017) Xiaobiao Liu et al.   Scientific Reports

Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy

(2016) Anupam Roy et al.   ACS Applied Materials & Interfaces

Sensing at the Surface of Graphene Field-Effect Transistors

(2016) Wangyang Fu et al.   ADVANCED MATERIALS

Leakage and field emission in side-gate graphene field effect transistors

(2016) A. Di Bartolomeo et al.   APPLIED PHYSICS LETTERS

Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors

(2016) G. He et al.   NANO LETTERS

Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell

(2016) Yabin Chen et al.   NANO LETTERS

The intrinsic origin of hysteresis in MoS2field effect transistors

(2016) Jiapei Shu et al.   Nanoscale

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

(2016) Antonio Di Bartolomeo   PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS

Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

(2016) Filippo Giubileo et al.   Nanomaterials

The role of charge trapping in MoS2/SiO2and MoS2/hBN field-effect transistors

(2016) Yury Yu Illarionov et al.   2D Materials

Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors

(2016) Yoshihiro Shimazu et al.   Scientific Reports

Topological phase transition and quantum spin Hall edge states of antimony few layers

(2016) Sung Hwan Kim et al.   Scientific Reports

Pressure-Modulated Conductivity, Carrier Density, and Mobility of Multilayered Tungsten Disulfide

(2015) Avinash P. Nayak et al.   ACS Nano

Exceptional and Anisotropic Transport Properties of Photocarriers in Black Phosphorus

(2015) Jiaqi He et al.   ACS Nano

Electronic, transport, and optical properties of bulk and mono-layer PdSe2

(2015) Jifeng Sun et al.   APPLIED PHYSICS LETTERS

Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides

(2015) Filip A. Rasmussen et al.   Journal of Physical Chemistry C

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

(2015) Antonio Di Bartolomeo et al.   NANOTECHNOLOGY

Exploring atomic defects in molybdenum disulphide monolayers

(2015) Jinhua Hong et al.   Nature Communications

Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

(2015) Du Xiang et al.   Nature Communications

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Highly Stable Carbon Nanotube Top-Gate Transistors with Tunable Threshold Voltage

(2014) Huiliang Wang et al.   ADVANCED MATERIALS

On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals

(2014) Hsiao-Yu Chang et al.   APPLIED PHYSICS LETTERS

Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors

(2013) Kyungjune Cho et al.   ACS Nano

Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

(2013) Simone Bertolazzi et al.   ACS Nano

Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I–V method

(2013) Young Gon Lee et al.   CARBON

Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors

(2013) A. Di Bartolomeo et al.   DIAMOND AND RELATED MATERIALS

Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors

(2013) Woanseo Park et al.   NANOTECHNOLOGY

Graphene Transistors: Status, Prospects, and Problems

(2013) Frank Schwierz   PROCEEDINGS OF THE IEEE

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW LETTERS

Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2Substrates using Raman Spectroscopy

(2012) Hua Xu et al.   Small

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

(2011) Young Gon Lee et al.   APPLIED PHYSICS LETTERS

Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors

(2011) Antonio Di Bartolomeo et al.   NANOTECHNOLOGY

Hysteresis of Electronic Transport in Graphene Transistors

(2010) Haomin Wang et al.   ACS Nano

Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell

(2010) A. Di Bartolomeo et al.   Nanoscale Research Letters

Electrical properties and memory effects of field-effect transistors from networks of single- and double-walled carbon nanotubes

(2010) Antonio Di Bartolomeo et al.   NANOTECHNOLOGY

Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

(2010) Tibor Grasser et al.   PHYSICAL REVIEW B

A single-poly EEPROM cell for embedded memory applications

(2009) A. Di Bartolomeo et al.   SOLID-STATE ELECTRONICS