A Physical Model for the Hysteresis in MoS2 Transistors

Published 2018 View Full Article

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Title
A Physical Model for the Hysteresis in MoS2 Transistors
Authors
Keywords
-
Journal
IEEE Journal of the Electron Devices Society
Volume -, Issue -, Pages 1-1
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-04-26
DOI
10.1109/jeds.2018.2829933

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