Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory

Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory

(2017) Xue-Feng Wang et al.   Small

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

(2017) Xiaolong Zhao et al.   Small

Formation of MoO3 and WO3 nanoscrolls from MoS2 and WS2 with atmospheric air plasma

(2017) Ximo S. Chu et al.   Journal of Materials Chemistry C

Behavioral Plasticity Emulated with Lithium Lanthanum Titanate-Based Memristive Devices: Habituation

(2017) Tuo Shi et al.   Advanced Electronic Materials

Graphene and Related Materials for Resistive Random Access Memories

(2017) Fei Hui et al.   Advanced Electronic Materials

Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

(2017) Su-Ting Han et al.   Advanced Science

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

(2016) Sen Liu et al.   ADVANCED MATERIALS

Pt/WO3/FTO memristive devices with recoverable pseudo-electroforming for time-delay switches in neuromorphic computing

(2016) Tuo Shi et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Conductive bridging random access memory—materials, devices and applications

(2016) Michael N Kozicki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Coexistence of analog and digital resistive switching in BiFeO 3 -based memristive devices

(2016) Tuo Shi et al.   SOLID STATE IONICS

Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets

(2015) Peifu Cheng et al.   NANO LETTERS

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

(2014) Haitao Sun et al.   ADVANCED FUNCTIONAL MATERIALS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Metal-Free, Single-Polymer Device Exhibits Resistive Memory Effect

(2013) Unnat S. Bhansali et al.   ACS Nano

Formation process of conducting filament in planar organic resistive memory

(2013) S. Gao et al.   APPLIED PHYSICS LETTERS

Reply to “Comment on ‘Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices’”

(2013) Shuang Gao et al.   Journal of Physical Chemistry C

Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode

(2013) He Tian et al.   NANO LETTERS

From Bulk to Monolayer MoS2: Evolution of Raman Scattering

(2012) Hong Li et al.   ADVANCED FUNCTIONAL MATERIALS

Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

(2012) Yi-Hsien Lee et al.   ADVANCED MATERIALS

Spontaneous Periodic Diameter Oscillations in InP Nanowires: The Role of Interface Instabilities

(2012) D. S. Oliveira et al.   NANO LETTERS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

(2012) Hongwei Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Resistive Switching Induced by Metallic Filaments Formation through Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate)

(2011) Zhishun Wang et al.   ACS Applied Materials & Interfaces

Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices

(2011) Byungjin Cho et al.   ADVANCED FUNCTIONAL MATERIALS

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation

(2011) Feng Pan et al.   IEEE ELECTRON DEVICE LETTERS

Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch

(2011) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells

(2010) Chang-Po Hsiung et al.   ACS Nano

Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor

(2010) Zhi Xu et al.   ACS Nano

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

(2010) C. Chen et al.   APPLIED PHYSICS LETTERS

Nonvolatile resistive switching memory based on amorphous carbon

(2010) F. Zhuge et al.   APPLIED PHYSICS LETTERS

Photoassisted Formation of an Atomic Switch

(2010) Takami Hino et al.   Small

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits

(2008) S. Ghosh et al.   APPLIED PHYSICS LETTERS

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

(2008) Sung Hyun Jo et al.   NANO LETTERS