Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

(2018) C. Haller et al.   APPLIED PHYSICS LETTERS

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

(2016) Felix Nippert et al.   APPLIED PHYSICS LETTERS

Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures

(2016) Aurelien David et al.   APPLIED PHYSICS LETTERS

Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

(2016) Matthias Auf der Maur et al.   PHYSICAL REVIEW LETTERS

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

(2015) S. Hammersley et al.   APPLIED PHYSICS LETTERS

Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

(2015) Christophe A. Hurni et al.   APPLIED PHYSICS LETTERS

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

(2015) Stefan Schulz et al.   PHYSICAL REVIEW B

First-principles calculations of indirect Auger recombination in nitride semiconductors

(2015) Emmanouil Kioupakis et al.   PHYSICAL REVIEW B

Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength

(2014) Andrew M. Armstrong et al.   Applied Physics Express

High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes

(2014) Aurelien David et al.   APPLIED PHYSICS LETTERS

Room temperature excitonic recombination in GaInN/GaN quantum wells

(2013) Torsten Langer et al.   APPLIED PHYSICS LETTERS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Droop in III-nitrides: Comparison of bulk and injection contributions

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS