Density of defect states retrieved from the hysteretic gate transfer characteristics of monolayer MoS2 field effect transistors

Title
Density of defect states retrieved from the hysteretic gate transfer characteristics of monolayer MoS2 field effect transistors
Authors
Keywords
-
Journal
AIP Advances
Volume 9, Issue 1, Pages 015230
Publisher
AIP Publishing
Online
2019-01-31
DOI
10.1063/1.5082829

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