Density of defect states retrieved from the hysteretic gate transfer characteristics of monolayer MoS2 field effect transistors
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Title
Density of defect states retrieved from the hysteretic gate transfer characteristics of monolayer MoS2 field effect transistors
Authors
Keywords
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Journal
AIP Advances
Volume 9, Issue 1, Pages 015230
Publisher
AIP Publishing
Online
2019-01-31
DOI
10.1063/1.5082829
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