Aging in Phase Change Materials: Getting Insight from Simulation

Evolution of short- and medium-range order in the melt-quenching amorphization of Ge2Sb2Te5

(2018) Chong Qiao et al.   Journal of Materials Chemistry C

Modeling the Phase-Change Memory Material, Ge2Sb2Te5, with a Machine-Learned Interatomic Potential

(2018) Felix C. Mocanu et al.   JOURNAL OF PHYSICAL CHEMISTRY B

Atomistic Simulations of the Crystallization and Aging of GeTe Nanowires

(2017) S. Gabardi et al.   Journal of Physical Chemistry C

Phase-change materials and rigidity

(2017) Andrea Piarristeguy et al.   MRS BULLETIN

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

(2017) Pierre Noé et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Impact of defect occupation on conduction in amorphous Ge2Sb2Te5

(2016) Matthias Kaes et al.   Scientific Reports

Structural change with the resistance drift phenomenon in amorphous GeTe phase change materials’ thin films

(2015) Pierre Noé et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Microscopic origin of resistance drift in the amorphous state of the phase-change compound GeTe

(2015) S. Gabardi et al.   PHYSICAL REVIEW B

Role of the van der Waals interactions and impact of the exchange-correlation functional in determining the structure of glassyGeTe4

(2015) Assil Bouzid et al.   PHYSICAL REVIEW B

Aging mechanisms in amorphous phase-change materials

(2015) Jean Yves Raty et al.   Nature Communications

Relation between bandgap and resistance drift in amorphous phase change materials

(2015) Martin Rütten et al.   Scientific Reports

Bonding Nature of Local Structural Motifs in Amorphous GeTe

(2014) Volker L. Deringer et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Ge L3-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge2Sb2Te5

(2014) K. V. Mitrofanov et al.   JOURNAL OF APPLIED PHYSICS

Influence of the exchange and correlation functional on the structure of amorphous Ge2Sb2Te5

(2014) Sebastiano Caravati et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Simulation of crystallization inGe2Sb2Te5: A memory effect in the canonical phase-change material

(2014) J. Kalikka et al.   PHYSICAL REVIEW B

How fragility makes phase-change data storage robust: insights from ab initio simulations

(2014) Wei Zhang et al.   Scientific Reports

Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys

(2013) J. Luckas et al.   JOURNAL OF APPLIED PHYSICS

Defects in amorphous phase-change materials

(2013) Jennifer Luckas et al.   JOURNAL OF MATERIALS RESEARCH

Atomistic origin of rapid crystallization of Ag-doped Ge-Sb-Te alloys: A joint experimental and theoretical study

(2013) B. Prasai et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Vibrational properties and stabilization mechanism of the amorphous phase of doped GeTe

(2013) Jean-Yves Raty et al.   PHYSICAL REVIEW B

Origins of Structural Hole Traps in Hydrogenated Amorphous Silicon

(2013) Eric Johlin et al.   PHYSICAL REVIEW LETTERS

Study on the Resistance Drift in Amorphous Ge2Sb2Te5 According to Defect Annihilation and Stress Relaxation

(2012) Ju-Young Cho et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Effect of amorphization on the structural stability and reversibility of Ge2Sb2Te5 and oxygen incorporated Ge2Sb2Te5 films

(2012) Seung Jong Park et al.   JOURNAL OF MATERIALS CHEMISTRY

Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials

(2012) Daniel Krebs et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

Breakdown of Stokes-Einstein relation in the supercooled liquid state of phase change materials

(2012) G. C. Sosso et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Nucleus-driven crystallization of amorphous Ge2Sb2Te5: A density functional study

(2012) J. Kalikka et al.   PHYSICAL REVIEW B

Neural network interatomic potential for the phase change material GeTe

(2012) Gabriele C. Sosso et al.   PHYSICAL REVIEW B

Breaking the Speed Limits of Phase-Change Memory

(2012) D. Loke et al.   SCIENCE

Physical origin of the resistance drift exponent in amorphous phase change materials

(2011) Mattia Boniardi et al.   APPLIED PHYSICS LETTERS

Effect of carbon doping on the structure of amorphous GeTe phase change material

(2011) G. E. Ghezzi et al.   APPLIED PHYSICS LETTERS

Boson peak as a consequence of rigidity: A perturbation theory approach

(2011) Hugo M. Flores-Ruiz et al.   PHYSICAL REVIEW B

Polymorphism in phase-change materials: melt-quenched and as-deposited amorphous structures in Ge2Sb2Te5from density functional calculations

(2011) J. Akola et al.   PHYSICAL REVIEW B

Computer-simulation design of new phase-change memory materials

(2010) J. Hegedus et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Understanding amorphous phase-change materials from the viewpoint of Maxwell rigidity

(2010) M. Micoulaut et al.   PHYSICAL REVIEW B

Bonding origin of optical contrast in phase-change memory materials

(2010) B. Huang et al.   PHYSICAL REVIEW B

Signature of Tetrahedral Ge in the Raman Spectrum of Amorphous Phase-Change Materials

(2010) Riccardo Mazzarello et al.   PHYSICAL REVIEW LETTERS

Excess of low frequency vibrational modes and glass transition: A molecular dynamics study for soft spheres at constant pressure

(2009) Hugo M. Flores-Ruiz et al.   JOURNAL OF CHEMICAL PHYSICS

Unified mechanisms for structural relaxation and crystallization in phase-change memory devices

(2009) D. Ielmini et al.   MICROELECTRONIC ENGINEERING

Experimentally constrained density-functional calculations of the amorphous structure of the prototypical phase-change materialGe2Sb2Te5

(2009) J. Akola et al.   PHYSICAL REVIEW B

Amorphous structure and electronic properties of the Ge1Sb2Te4 phase change material

(2009) Jean-Yves Raty et al.   SOLID STATE SCIENCES

Binary Alloys of Ge and Te: Order, Voids, and the Eutectic Composition

(2008) J. Akola et al.   PHYSICAL REVIEW LETTERS