Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure

Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering

(2017) Tiancheng Gong et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

(2017) Rongrong Cao et al.   IEEE ELECTRON DEVICE LETTERS

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

(2017) Xiaolong Zhao et al.   Small

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation

(2015) Xiaoxin Xu et al.   IEEE ELECTRON DEVICE LETTERS

Atomic View of Filament Growth in Electrochemical Memristive Elements

(2015) Hangbing Lv et al.   Scientific Reports

Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming

(2014) Hongtao Liu et al.   IEEE ELECTRON DEVICE LETTERS

Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current

(2013) Takeki Ninomiya et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Revelation on the Interrelated Mechanism of Polarity-Dependent and Multilevel Resistive Switching in TaOx-Based Memory Devices

(2013) Ying-Chuan Chen et al.   Journal of Physical Chemistry C

Bipolar resistive switching memory using bilayer TaOx/WOx films

(2012) A. Prakash et al.   SOLID-STATE ELECTRONICS

Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

(2011) Chang Bum Lee et al.   IEEE ELECTRON DEVICE LETTERS

Barrier layer thickness analysis for reliable copper plug process in CMOS technology

(2011) S.K. Manhas et al.   MICROELECTRONICS RELIABILITY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

(2010) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

(2008) Naoki Banno et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES