Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors
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Title
Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors
Authors
Keywords
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Journal
ADVANCED MATERIALS
Volume 28, Issue 43, Pages 9519-9525
Publisher
Wiley
Online
2016-09-13
DOI
10.1002/adma.201601949
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