Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors

标题
Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 28, Issue 43, Pages 9519-9525
出版商
Wiley
发表日期
2016-09-13
DOI
10.1002/adma.201601949

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