Vertical and in-plane heterostructures from WS 2 /MoS 2 monolayers

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

(2014) Britton W. H. Baugher et al.   Nature Nanotechnology

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

(2014) Jason S. Ross et al.   Nature Nanotechnology

Solar-energy conversion and light emission in an atomic monolayer p–n diode

(2014) Andreas Pospischil et al.   Nature Nanotechnology

Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges

(2014) L. Liu et al.   SCIENCE

New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides

(2014) H. Terrones et al.   Scientific Reports

Continuous Growth of Hexagonal Graphene and Boron Nitride In-Plane Heterostructures by Atmospheric Pressure Chemical Vapor Deposition

(2013) Gang Hee Han et al.   ACS Nano

Nonblinking, Intense Two-Dimensional Light Emitter: Monolayer WS2 Triangles

(2013) Namphung Peimyoo et al.   ACS Nano

Band offsets and heterostructures of two-dimensional semiconductors

(2013) Jun Kang et al.   APPLIED PHYSICS LETTERS

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide

(2013) Wu Zhou et al.   NANO LETTERS

Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide

(2013) Yongji Gong et al.   NANO LETTERS

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

(2013) Arend M. van der Zande et al.   NATURE MATERIALS

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers

(2013) Sina Najmaei et al.   NATURE MATERIALS

Epitaxial growth of single-domain graphene on hexagonal boron nitride

(2013) Wei Yang et al.   NATURE MATERIALS

Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

(2013) Woo Jong Yu et al.   Nature Nanotechnology

In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes

(2013) Zheng Liu et al.   Nature Nanotechnology

Electronic properties of the MoS2-WS2heterojunction

(2013) K. Kośmider et al.   PHYSICAL REVIEW B

Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides

(2013) Humberto Terrones et al.   Scientific Reports

Identification of individual and few layers of WS2 using Raman Spectroscopy

(2013) Ayse Berkdemir et al.   Scientific Reports

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Fabrication and Characterization of Graphene/Hexagonal Boron Nitride Hybrid Sheets

(2012) Yasumitsu Miyata et al.   Applied Physics Express

Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers

(2012) Humberto R. Gutiérrez et al.   NANO LETTERS

Graphene and boron nitride lateral heterostructures for atomically thin circuitry

(2012) Mark P. Levendorf et al.   NATURE

Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices

(2012) S. J. Haigh et al.   NATURE MATERIALS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Boron nitride substrates for high mobility chemical vapor deposited graphene

(2011) W. Gannett et al.   APPLIED PHYSICS LETTERS

Mixed Low-Dimensional Nanomaterial: 2D Ultranarrow MoS2Inorganic Nanoribbons Encapsulated in Quasi-1D Carbon Nanotubes

(2010) Zhiyong Wang et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers

(2010) Li Song et al.   NANO LETTERS

Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy

(2010) Ondrej L. Krivanek et al.   NATURE

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS