Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m- and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition
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Title
Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m- and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition
Authors
Keywords
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Journal
Journal of Materials Chemistry C
Volume 2, Issue 15, Pages 2692
Publisher
Royal Society of Chemistry (RSC)
Online
2014-01-30
DOI
10.1039/c3tc32212b
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