Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m- and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition
出版年份 2014 全文链接
标题
Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m- and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition
作者
关键词
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出版物
Journal of Materials Chemistry C
Volume 2, Issue 15, Pages 2692
出版商
Royal Society of Chemistry (RSC)
发表日期
2014-01-30
DOI
10.1039/c3tc32212b
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