Journal
NANO LETTERS
Volume 12, Issue 6, Pages 3344-3350Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl301690e
Keywords
GaN; AlN; Nanowire Heterostructures; Multiple Quantum Wells; Cathodoluminscence; Photoluminescence
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Funding
- U.S. Department of Energy by Lawrence Livermore National Laboratory [DEAC52-07NA27344]
- UCSC
- NSF [DMR-0847786, DMR-0745555]
- National Center for Electron Microscopy at Lawrence Berkeley National Laboratory by U.S. Department of Energy [DE-AC02-05CH11231]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0847786] Funding Source: National Science Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0745555] Funding Source: National Science Foundation
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We report the controlled synthesis of AlN/GaN multi-quantum well (MQW) radial nanowire heterostructures by metal-organic chemical vapor deposition. The structure consists of a single-crystal GaN nanowire core and an epitaxially grown (AlN/GaN)(m) (m = 3, 13) MQW shell. Optical excitation of individual MQW nanowires yielded strong, blue-shifted photoluminescence in the range 340-360 nm, with respect to the GaN near band-edge emission at 368.8 nm. Cathodoluminescence analysis on the cross-sectional MQW nanowire samples showed that the blue-shifted ultraviolet luminescence originated from the GaN quantum wells, while the defect-associated yellow luminescence was emitted from the GaN core. Computational simulation provided a quantitative analysis of the mini-band energies in the AlN/GaN superlattices and suggested the observed blue-shifted emission corresponds to the interband transitions between the second subbands of GaN, as a result of quantum confinement and strain effect in these AlN/GaN MQW nanowire structures.
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