Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N2O Plasma Treated MgO Gate Dielectrics
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Title
Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N2O Plasma Treated MgO Gate Dielectrics
Authors
Keywords
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Journal
ECS Journal of Solid State Science and Technology
Volume 2, Issue 6, Pages P287-P291
Publisher
The Electrochemical Society
Online
2013-05-08
DOI
10.1149/2.001307jss
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