Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics

Published 2008 View Full Article

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Title
Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 4, Pages 2349-2353
Publisher
Japan Society of Applied Physics
Online
2008-04-25
DOI
10.1143/jjap.47.2349

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