S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

Towards Passivation of Ge(100) Surfaces by Sulfur Adsorption from a (NH4)2S Solution: A Combined NEXAFS, STM and LEED Study

(2011) C. Fleischmann et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated Germanium

(2011) S. Sioncke et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Electronic Structure of Sulfur Studied by X-ray Absorption and Emission Spectroscopy

(2009) R. Alonso Mori et al.   ANALYTICAL CHEMISTRY

Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3: In situ surface characterization

(2009) Shankar Swaminathan et al.   APPLIED PHYSICS LETTERS

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)

(2009) Akira Toriumi et al.   MICROELECTRONIC ENGINEERING

Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation

(2008) Annelies Delabie et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY