Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below
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Title
Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below
Authors
Keywords
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Journal
AIP Advances
Volume 2, Issue 4, Pages 042179
Publisher
AIP Publishing
Online
2012-12-06
DOI
10.1063/1.4771681
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