High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

(2014) Jai Verma et al.   APPLIED PHYSICS LETTERS

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

(2013) Jai Verma et al.   APPLIED PHYSICS LETTERS

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

(2013) Peng Dong et al.   APPLIED PHYSICS LETTERS

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

(2012) Max Shatalov et al.   Applied Physics Express

Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency

(2011) Katsumasa Kamiya et al.   APPLIED PHYSICS LETTERS

AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

(2011) Yitao Liao et al.   APPLIED PHYSICS LETTERS

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

(2011) Yoshitaka Taniyasu et al.   APPLIED PHYSICS LETTERS

Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

(2010) Akira Fujioka et al.   Applied Physics Express

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

(2010) Cyril Pernot et al.   Applied Physics Express

Identification of extremely radiative nature of AlN by time-resolved photoluminescence

(2010) T. Onuma et al.   APPLIED PHYSICS LETTERS

Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures

(2010) Weihuang Yang et al.   JOURNAL OF MATERIALS RESEARCH

Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots

(2009) J. Renard et al.   APPLIED PHYSICS LETTERS

Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1−xN/AlyGa1−yN superlattices

(2009) Jinchai Li et al.   APPLIED PHYSICS LETTERS

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

(2009) Sang Li-Wen et al.   CHINESE PHYSICS LETTERS

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density

(2008) Hideki Hirayama et al.   Applied Physics Express

Realization of 340-nm-Band High-Output-Power (>7 mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN

(2008) Sachie Fujikawa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Stranski–Krastanov growth of GaN quantum dots on AlN template by metalorganic chemical vapor deposition

(2008) J. C. Zhang et al.   JOURNAL OF APPLIED PHYSICS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics