Design principles of tuning oxygen vacancy diffusion in SrZrO3 for resistance random access memory

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Stimuli-responsive switching of magnetic properties and solid-state colors for 2,3′-biimidazo[1,2-a]pyridin-2′-one radical derivatives

(2014) Guo-Ping Yong et al.   Journal of Materials Chemistry C

Towards the Development of Flexible Non-Volatile Memories

(2013) Su-Ting Han et al.   ADVANCED MATERIALS

Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory

(2013) Liang Zhao et al.   APPLIED PHYSICS LETTERS

Band gap engineering in huge-gap semiconductor SrZrO3 for visible-light photocatalysis

(2013) Zhonglu Guo et al.   INTERNATIONAL JOURNAL OF HYDROGEN ENERGY

Role of oxygen vacancies in the resistive switching of SrZrO3 for resistance random access memory

(2013) Zhonglu Guo et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch

(2013) Byung Joon Choi et al.   NANO LETTERS

Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

(2013) Teng-Han Huang et al.   Journal of Materials Chemistry C

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Improvement of oxygen vacancy migration through Nb doping on Ba0.7Sr0.3TiO3 thin films for resistance switching random access memory application

(2012) Chang Hwa Jung et al.   APPLIED PHYSICS LETTERS

A generalized solid-state nudged elastic band method

(2012) Daniel Sheppard et al.   JOURNAL OF CHEMICAL PHYSICS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

(2011) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Developments in nanocrystal memory

(2011) Ting-Chang Chang et al.   Materials Today

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

(2010) Ruth Muenstermann et al.   ADVANCED MATERIALS

Ionic doping effect in ZrO2 resistive switching memory

(2010) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of $\hbox{SrZrO}_{3}$-Based Memory Films

(2010) Meng-Han Lin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching characteristics and mechanisms of Pt-embedded SrZrO3 memory devices

(2010) Meng-Han Lin et al.   JOURNAL OF APPLIED PHYSICS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Ab-initiosimulations of materials using VASP: Density-functional theory and beyond

(2008) Jürgen Hafner   JOURNAL OF COMPUTATIONAL CHEMISTRY

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology