Improvement of oxygen vacancy migration through Nb doping on Ba0.7Sr0.3TiO3 thin films for resistance switching random access memory application

Title
Improvement of oxygen vacancy migration through Nb doping on Ba0.7Sr0.3TiO3 thin films for resistance switching random access memory application
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 26, Pages 262107
Publisher
AIP Publishing
Online
2012-06-28
DOI
10.1063/1.4730400

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