Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system

标题
Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system
作者
关键词
-
出版物
TECHNICAL PHYSICS LETTERS
Volume 38, Issue 11, Pages 982-984
出版商
Pleiades Publishing Ltd
发表日期
2012-12-15
DOI
10.1134/s1063785012110120

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