Formation of strain-induced quantum dots in gated semiconductor nanostructures

Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures

(2012) P. G. Evans et al.   ADVANCED MATERIALS

Determining the location and cause of unintentional quantum dots in a nanowire

(2012) Ted Thorbeck et al.   JOURNAL OF APPLIED PHYSICS

Comparison of gate geometries for tunable, local barriers in InAs nanowires

(2012) Peter Dahl Nissen et al.   JOURNAL OF APPLIED PHYSICS

Effects of Strain on the Carrier Mobility in Silicon Nanowires

(2012) Yann-Michel Niquet et al.   NANO LETTERS

Coherent singlet-triplet oscillations in a silicon-based double quantum dot

(2012) B. M. Maune et al.   NATURE

A single-atom electron spin qubit in silicon

(2012) Jarryd J. Pla et al.   NATURE

Embracing the quantum limit in silicon computing

(2011) John J. L. Morton et al.   NATURE

Electrical contacts to one- and two-dimensional nanomaterials

(2011) François Léonard et al.   Nature Nanotechnology

Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon

(2011) L. Dreher et al.   PHYSICAL REVIEW LETTERS

Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot

(2010) M. Xiao et al.   PHYSICAL REVIEW LETTERS

Electronic properties of quantum dot systems realized in semiconductor nanowires

(2010) J Salfi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Spin States of the First Four Holes in a Silicon Nanowire Quantum Dot

(2009) Floris A. Zwanenburg et al.   NANO LETTERS

Spin-32physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings

(2009) D. Csontos et al.   PHYSICAL REVIEW B

Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry

(2009) E. P. Nordberg et al.   PHYSICAL REVIEW B

Electron spin blockade and singlet-triplet transition in a silicon single electron transistor

(2009) Binhui Hu et al.   PHYSICAL REVIEW B

Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

(2008) Neil M. Zimmerman et al.   JOURNAL OF APPLIED PHYSICS

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

(2008) Nakul Shaji et al.   Nature Physics

Influence of Strain on the Conduction Band Structure of Strained Silicon Nanomembranes

(2008) C. Euaruksakul et al.   PHYSICAL REVIEW LETTERS

Tunable double quantum dots in InAs nanowires

(2007) Marc Scheffler et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES