Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

Title
Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 3, Pages 033710
Publisher
AIP Publishing
Online
2008-08-08
DOI
10.1063/1.2949700

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