Domain control of carrier density at a semiconductor-ferroelectric interface
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Domain control of carrier density at a semiconductor-ferroelectric interface
Authors
Keywords
-
Journal
Scientific Reports
Volume 5, Issue 1, Pages -
Publisher
Springer Nature
Online
2015-10-19
DOI
10.1038/srep14740
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Carrier density modulation in a germanium heterostructure by ferroelectric switching
- (2015) Patrick Ponath et al. Nature Communications
- Strong dependence of dielectric properties on electrical boundary conditions and interfaces in ferroelectric superlattices
- (2014) I. B. Misirlioglu et al. APPLIED PHYSICS LETTERS
- Ferroelectric-semiconductor photovoltaics: Non-PN junction solar cells
- (2014) Fude Liu et al. APPLIED PHYSICS LETTERS
- Field-effect BaTiO3-Si solar cells
- (2014) Wentao Wang et al. APPLIED PHYSICS LETTERS
- Carrier accumulation near electrodes in ferroelectric films due to polarization boundary conditions
- (2014) I. B. Misirlioglu et al. JOURNAL OF APPLIED PHYSICS
- Ferroelectric tunnel junctions with graphene electrodes
- (2014) H. Lu et al. Nature Communications
- Terahertz plasmonics in ferroelectric-gated graphene
- (2013) Dafei Jin et al. APPLIED PHYSICS LETTERS
- Phase transitions in ferroelectric-paraelectric superlattices: Stability of single domain state
- (2013) A. P. Levanyuk et al. APPLIED PHYSICS LETTERS
- Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect
- (2013) I B Misirlioglu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials
- (2013) Ilya Grinberg et al. NATURE
- Beyond the barrier
- (2013) E. Y. Tsymbal et al. NATURE MATERIALS
- Effect of a built-in electric field in asymmetric ferroelectric tunnel junctions
- (2013) Yang Liu et al. PHYSICAL REVIEW B
- Polarization-controlled Ohmic to Schottky transition at a metal/ferroelectric interface
- (2013) Xiaohui Liu et al. PHYSICAL REVIEW B
- Non-volatile memory based on the ferroelectric photovoltaic effect
- (2013) Rui Guo et al. Nature Communications
- 64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention
- (2012) Xizhen Zhang et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory
- (2011) Giovanni A. Salvatore et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Phase transitions in ferroelectric-paraelectric superlattices
- (2011) A. P. Levanyuk et al. JOURNAL OF APPLIED PHYSICS
- Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr,Ti)O3/Pt and paraelectric capacitors
- (2011) Hyun Ju Lee et al. JOURNAL OF APPLIED PHYSICS
- Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor with Pt/Bi3.4Ce0.6Ti3O12/CeO2/Si structure
- (2011) Bo Jiang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Revealing the role of defects in ferroelectric switching with atomic resolution
- (2011) Peng Gao et al. Nature Communications
- Polarization reversal behavior in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt capacitors for different reversal directions
- (2010) Hyun Ju Lee et al. APPLIED PHYSICS LETTERS
- Ferroelectric transistors with improved characteristics at high temperature
- (2010) Giovanni A. Salvatore et al. APPLIED PHYSICS LETTERS
- Above-bandgap voltages from ferroelectric photovoltaic devices
- (2010) S. Y. Yang et al. Nature Nanotechnology
- Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si
- (2010) Takeshi Horiuchi et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Fabrication and characterization of sub-0.6-µm ferroelectric-gate field-effect transistors
- (2010) Le Van Hai et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Fabrication and characterization of metal-ferroelectric (PbZr0.6Ti0.4O3)-insulator (La2O3)-semiconductor capacitors for nonvolatile memory applications
- (2009) Trevor Pi-Chun Juan et al. JOURNAL OF APPLIED PHYSICS
- Continuous Theory of Ferroelectric States in Ultrathin Films with Real Electrodes
- (2009) A. M. Bratkovsky et al. Journal of Computational and Theoretical Nanoscience
- Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
- (2009) A. Gruverman et al. NANO LETTERS
- Universal Properties of Ferroelectric Domains
- (2009) Igor A. Luk’yanchuk et al. PHYSICAL REVIEW LETTERS
- Landau Expansion for Ferroelectrics: Which Variable to Use?
- (2008) Alexander K. Tagantsev FERROELECTRICS
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started