Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor with Pt/Bi3.4Ce0.6Ti3O12/CeO2/Si structure

Published 2011 View Full Article

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Title
Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor with Pt/Bi3.4Ce0.6Ti3O12/CeO2/Si structure
Authors
Keywords
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Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 45, Issue 2, Pages 025102
Publisher
IOP Publishing
Online
2011-12-20
DOI
10.1088/0022-3727/45/2/025102

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