Transport mechanisms of electrons and holes in dielectric films

Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps

(2012) A. V. Shaposhnikov et al.   APPLIED PHYSICS LETTERS

Transport properties of HfO2−xbased resistive-switching memories

(2012) Zhongrui Wang et al.   PHYSICAL REVIEW B

Electronic structure of silicon nitride

(2012) Vladimir A Gritsenko   PHYSICS-USPEKHI

Charge transport in dielectrics via tunneling between traps

(2011) K. A. Nasyrov et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure of an oxygen vacancy in Al2O3 from the results of Ab Initio quantum-chemical calculations and photoluminescence experiments

(2011) V. A. Pustovarov et al.   JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation

(2011) V.A. Pustovarov et al.   THIN SOLID FILMS

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Oxygen deficiency defects in amorphous Al2O3

(2010) T. V. Perevalov et al.   JOURNAL OF APPLIED PHYSICS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Application and electronic structure of high-permittivity dielectrics

(2010) Timofei V Perevalov et al.   PHYSICS-USPEKHI

Charge transport mechanism in amorphous alumina

(2009) Yu. N. Novikov et al.   APPLIED PHYSICS LETTERS

Multiphonon mechanism of the ionization of traps in Al2O3: Experiment and numerical simulation

(2009) Yu. N. Novikov et al.   JETP LETTERS

Phonon-coupled trap-assisted charge injection in metal-nitride-oxide-silicon/silicon-oxide-nitride-oxide-silicon structures

(2009) K. A. Nasyrov et al.   JOURNAL OF APPLIED PHYSICS

Thermionic field emission of electrons from metals and explosive electron emission from micropoints

(2009) A. B. Petrin   JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS

Trap-assisted tunneling hole injection in SiO2: Experiment and theory

(2009) K. A. Nasyrov et al.   JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS

Electronic structure of memory traps in silicon nitride

(2009) V.A. Gritsenko et al.   MICROELECTRONIC ENGINEERING

Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect

(2009) Yu.N. Novikov et al.   MICROELECTRONICS RELIABILITY

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

The charge transport mechanism in silicon nitride: Multi-phonon trap ionization

(2009) A.V. Vishnyakov et al.   SOLID-STATE ELECTRONICS

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides

(2008) V A Gritsenko   PHYSICS-USPEKHI