Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium

How reliable are Hanle measurements in metals in a three-terminal geometry?

(2013) Oihana Txoperena et al.   APPLIED PHYSICS LETTERS

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

(2013) André Dankert et al.   Scientific Reports

Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

(2012) Satoshi Iba et al.   Applied Physics Express

Spin Accumulation and Spin Lifetime in p-Type Germanium at Room Temperature

(2012) Satoshi Iba et al.   Applied Physics Express

Critical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in three-terminal geometry

(2012) Tetsuya Uemura et al.   APPLIED PHYSICS LETTERS

Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon

(2012) M. Ishikawa et al.   APPLIED PHYSICS LETTERS

Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

(2012) K. Kasahara et al.   JOURNAL OF APPLIED PHYSICS

Spin injection and detection between CoFe/AlOx junctions and SOI investigated by Hanle effect measurements

(2012) Tomoaki Inokuchi et al.   JOURNAL OF APPLIED PHYSICS

Silicon spintronics

(2012) Ron Jansen   NATURE MATERIALS

Low-resistance spin injection into silicon using graphene tunnel barriers

(2012) O. M. J. van 't Erve et al.   Nature Nanotechnology

Injection and detection of spin in a semiconductor by tunneling via interface states

(2012) R. Jansen et al.   PHYSICAL REVIEW B

Silicon spintronics with ferromagnetic tunnel devices

(2012) R Jansen et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

(2011) Toshio Suzuki et al.   Applied Physics Express

Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system

(2011) Kun-Rok Jeon et al.   APPLIED PHYSICS LETTERS

Electrical spin injection and detection at Al2O3/n-type germanium interface using three terminal geometry

(2011) A. Jain et al.   APPLIED PHYSICS LETTERS

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

(2011) Y. Ando et al.   APPLIED PHYSICS LETTERS

Electric-field control of spin accumulation signals in silicon at room temperature

(2011) Y. Ando et al.   APPLIED PHYSICS LETTERS

Interface state energy distribution and Pb defects at Si(110)/SiO2 interfaces: Comparison to (111) and (100) silicon orientations

(2011) N. H. Thoan et al.   JOURNAL OF APPLIED PHYSICS

Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

(2011) Kun-Rok Jeon et al.   PHYSICAL REVIEW B

Electrical spin injection and transport in germanium

(2011) Yi Zhou et al.   PHYSICAL REVIEW B

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

(2011) S. P. Dash et al.   PHYSICAL REVIEW B

Electrical creation of spin accumulation in -type germanium

(2011) H. Saito et al.   SOLID STATE COMMUNICATIONS

Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

(2010) T. Sasaki et al.   APPLIED PHYSICS LETTERS

Spin transport theory in ferromagnet/semiconductor systems with noncollinear magnetization configurations

(2010) Yang Song et al.   PHYSICAL REVIEW B

Electrical spin injection into moderately doped silicon enabled by tailored interfaces

(2010) R. Jansen et al.   PHYSICAL REVIEW B

Electrical spin injection into Si(001) through a SiO2 tunnel barrier

(2009) C. H. Li et al.   APPLIED PHYSICS LETTERS

Electrical spin injection into Si: A comparison between Fe/Si Schottky and Fe/Al2O3 tunnel contacts

(2009) G. Kioseoglou et al.   APPLIED PHYSICS LETTERS

Spin injection in silicon at zero magnetic field

(2009) L. Grenet et al.   APPLIED PHYSICS LETTERS

Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers

(2009) R. S. Patel et al.   JOURNAL OF APPLIED PHYSICS

Electrical creation of spin polarization in silicon at room temperature

(2009) Saroj P. Dash et al.   NATURE

Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor

(2009) M. Tran et al.   PHYSICAL REVIEW LETTERS

Nobel Lecture: Origin, development, and future of spintronics

(2008) Albert Fert   REVIEWS OF MODERN PHYSICS