Efficient Spin Injection into Silicon and the Role of the Schottky Barrier
Published 2013 View Full Article
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Title
Efficient Spin Injection into Silicon and the Role of the Schottky Barrier
Authors
Keywords
-
Journal
Scientific Reports
Volume 3, Issue 1, Pages -
Publisher
Springer Nature
Online
2013-11-12
DOI
10.1038/srep03196
References
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Related references
Note: Only part of the references are listed.- Spin-Pump-Induced Spin Transport inp-Type Si at Room Temperature
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- (2012) Ron Jansen NATURE MATERIALS
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- (2012) O. M. J. van 't Erve et al. Nature Nanotechnology
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- (2012) A. Jain et al. PHYSICAL REVIEW LETTERS
- Silicon spintronics with ferromagnetic tunnel devices
- (2012) R Jansen et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Room-temperature generation of giant pure spin currents using epitaxial Co2FeSi spin injectors
- (2012) Takashi Kimura et al. NPG Asia Materials
- Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
- (2011) Toshio Suzuki et al. Applied Physics Express
- Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system
- (2011) Kun-Rok Jeon et al. APPLIED PHYSICS LETTERS
- Thermal spin current from a ferromagnet to silicon by Seebeck spin tunnelling
- (2011) Jean-Christophe Le Breton et al. NATURE
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- (2011) G. Salis et al. PHYSICAL REVIEW B
- Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
- (2011) S. P. Dash et al. PHYSICAL REVIEW B
- Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts
- (2011) C.H. Li et al. Nature Communications
- Electrical spin injection into moderately doped silicon enabled by tailored interfaces
- (2010) R. Jansen et al. PHYSICAL REVIEW B
- Electrical spin injection into Si(001) through a SiO2 tunnel barrier
- (2009) C. H. Li et al. APPLIED PHYSICS LETTERS
- Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers
- (2009) R. S. Patel et al. JOURNAL OF APPLIED PHYSICS
- Electrical creation of spin polarization in silicon at room temperature
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- Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor
- (2009) M. Tran et al. PHYSICAL REVIEW LETTERS
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