Electrical spin injection and detection at Al2O3/n-type germanium interface using three terminal geometry

Electrical spin injection and transport in germanium

(2011) Yi Zhou et al.   PHYSICAL REVIEW B

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

(2011) S. P. Dash et al.   PHYSICAL REVIEW B

Electrical creation of spin accumulation in -type germanium

(2011) H. Saito et al.   SOLID STATE COMMUNICATIONS

Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts

(2011) C.H. Li et al.   Nature Communications

Lateral Spin Injection in Germanium Nanowires

(2010) En-Shao Liu et al.   NANO LETTERS

Spin injection in silicon at zero magnetic field

(2009) L. Grenet et al.   APPLIED PHYSICS LETTERS

Electrical creation of spin polarization in silicon at room temperature

(2009) Saroj P. Dash et al.   NATURE

Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor

(2009) M. Tran et al.   PHYSICAL REVIEW LETTERS

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

(2008) Tomonori Nishimura et al.   Applied Physics Express

Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

(2008) Yi Zhou et al.   APPLIED PHYSICS LETTERS