Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3064135
Keywords
alumina; boron; charge injection; cobalt; electron spin polarisation; elemental semiconductors; ferromagnetic materials; Ge-Si alloys; light emitting diodes; magnetic anisotropy; phosphorus; p-i-n diodes; platinum; remanence; silicon; tunnelling
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In this letter, we show efficient electrical spin injection into a SiGe based p-i-n light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electron spin polarization is then analyzed through the circular polarization of emitted light. All the light polarization measurements are performed without an external applied magnetic field, i.e., in remanent magnetic states. The light polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the Co/Pt injector. We could achieve a circular polarization degree of the emitted light of 3% at 5 K. Moreover this light polarization remains almost constant at least up to 200 K.
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