Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions
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Title
Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 88, Issue 8, Pages -
Publisher
American Physical Society (APS)
Online
2013-08-15
DOI
10.1103/physrevb.88.085206
References
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Related references
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- How to measure atomic diffusion processes in the sub-nanometer range
- (2007) H. Schmidt et al. ACTA MATERIALIA
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