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Title
Radiation-enhanced self- and boron diffusion in germanium
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 87, Issue 11, Pages -
Publisher
American Physical Society (APS)
Online
2013-03-12
DOI
10.1103/physrevb.87.115202
References
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Related references
Note: Only part of the references are listed.- Mechanisms of boron diffusion in silicon and germanium
- (2013) S. Mirabella et al. JOURNAL OF APPLIED PHYSICS
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- Suppression of donor-vacancy clusters in germanium by concurrent annealing and irradiation
- (2011) S. Schneider et al. APPLIED PHYSICS LETTERS
- Role of self-interstitials on B diffusion in Ge
- (2011) G.G. Scapellato et al. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
- Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge
- (2010) E. Napolitani et al. APPLIED PHYSICS LETTERS
- Dopant-vacancy cluster formation in germanium
- (2010) A. Chroneos JOURNAL OF APPLIED PHYSICS
- Diffusion and doping issues in germanium
- (2010) H. Bracht et al. MICROELECTRONIC ENGINEERING
- Intrinsic and extrinsic diffusion of indium in germanium
- (2009) R. Kube et al. JOURNAL OF APPLIED PHYSICS
- Germanium surface and interfaces (Invited Paper)
- (2009) A. Dimoulas et al. MICROELECTRONIC ENGINEERING
- Experimental and theoretical study of the thermal solubility of the vacancy in germanium
- (2009) J. Vanhellemont et al. PHYSICA B-CONDENSED MATTER
- Mechanism of B diffusion in crystalline Ge under proton irradiation
- (2009) E. Bruno et al. PHYSICAL REVIEW B
- Interstitial-Mediated Diffusion in Germanium under Proton Irradiation
- (2009) H. Bracht et al. PHYSICAL REVIEW LETTERS
- Self-diffusion in germanium isotope multilayers at low temperatures
- (2008) E. Hüger et al. APPLIED PHYSICS LETTERS
- Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion
- (2008) Miki Naganawa et al. APPLIED PHYSICS LETTERS
- First principles calculations of the formation energy and deep levels associated with the neutral and charged vacancy in germanium
- (2008) P. Śpiewak et al. JOURNAL OF APPLIED PHYSICS
- Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
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- Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
- (2008) D. P. Brunco et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Ab-initio simulation of self-interstitial in germanium
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- (2008) A. Mesli et al. PHYSICAL REVIEW B
- Correlation between self-diffusion in Si and the migration mechanisms of vacancies and self-interstitials: An atomistic study
- (2008) M. Posselt et al. PHYSICAL REVIEW B
- Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results
- (2008) S. Brotzmann et al. PHYSICAL REVIEW B
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