Quantitative modeling of the temperature-dependent internal quantum efficiency in InGaN light emitting diodes

Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

(2013) Bastian Galler et al.   Applied Physics Express

The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes

(2013) Roman Vaxenburg et al.   APPLIED PHYSICS LETTERS

Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop

(2013) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study

(2013) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

(2013) M. Binder et al.   APPLIED PHYSICS LETTERS

Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

(2013) Emmanouil Kioupakis et al.   NEW JOURNAL OF PHYSICS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

(2012) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Numerical analysis of indirect Auger transitions in InGaN

(2012) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

(2012) B. Galler et al.   APPLIED PHYSICS LETTERS

Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes

(2012) A. Armstrong et al.   OPTICS EXPRESS

Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes

(2012) Dario Schiavon et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Auger recombination in GaInN/GaN quantum well laser structures

(2011) M. Brendel et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes

(2011) Lei Wang et al.   OPTICS EXPRESS

Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes

(2010) X. Ni et al.   Physica Status Solidi-Rapid Research Letters

Efficient hole transport in asymmetric coupled InGaN multiple quantum wells

(2009) Jiang-Yong Zhang et al.   APPLIED PHYSICS LETTERS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The role of dislocations as nonradiative recombination centers in InGaN quantum wells

(2008) Josh Abell et al.   APPLIED PHYSICS LETTERS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

Unified simulation of transport and luminescence in optoelectronic nanostructures

(2008) Sebastian Steiger et al.   Journal of Computational Electronics