Study of the bipolar resistive-switching behaviors in Pt/GdOx/TaNxstructure for RRAM application

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

(2013) L. S. Wang et al.   APPLIED PHYSICS LETTERS

Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5

(2012) Youngbae Ahn et al.   JOURNAL OF APPLIED PHYSICS

Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices

(2012) Sharif Md. Sadaf et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

(2011) Tung-Ming Pan et al.   APPLIED PHYSICS LETTERS

Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

(2011) Chang Bum Lee et al.   IEEE ELECTRON DEVICE LETTERS

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Copper oxide resistive switching memory for e-textile

(2011) Jin-Woo Han et al.   AIP Advances

The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device

(2010) Kou-Chen Liu et al.   MICROELECTRONICS RELIABILITY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistance switching behaviors of V-doped La0.67Ca0.33MnO3 thin films on F-doped SnO2 conducting glass

(2009) Ting Zhang et al.   JOURNAL OF APPLIED PHYSICS

Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

(2009) B. Sun et al.   JOURNAL OF APPLIED PHYSICS

Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

(2009) Xun Cao et al.   JOURNAL OF APPLIED PHYSICS

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

(2008) Wan Shen et al.   APPLIED PHYSICS LETTERS

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

(2008) Jung Won Seo et al.   APPLIED PHYSICS LETTERS

XPS depth-profile of the suboxide distribution at the native oxide/Ta interface

(2008) Manika Khanuja et al.   JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today