High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors

Published 2008 View Full Article

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Title
High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 25, Pages 253501
Publisher
AIP Publishing
Online
2008-06-26
DOI
10.1063/1.2951615
References
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