期刊
OPTICS EXPRESS
卷 20, 期 25, 页码 27384-27392出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.20.027384
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资金
- National Key Basic Research Program of China [2011CB301900, 2012CB619306]
- National High-Tech Research and Development Program of China [2011AA03A103]
- National Natural Science Foundation of China [61076012, 61076013, 60976009, 61204054, 61275052]
The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) were investigated using the theoretical model based on the k.p method. Numerical results show that there is valence subband coupling which can influence the peak emission wavelength and emission intensity for TE and TM polarization components from Al-rich AlGaN/AlN QWs. Especially the valence subband coupling could be strong enough when CH1 is close to HH1 and LH1 subbands to modulate the critical Al content switching dominant emissions from TE to TM polarization. It is believed that the valence subband coupling may give important influence on polarization properties of spontaneous emissions and should be considered in designing high efficiency AlGaN-based ultraviolet (UV) LEDs. (c) 2012 Optical Society of America
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