High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for n+/p Junction Diode

Highly activated n-type dopant is essential for n(+) /p germanium diodes which will be in use for source/drain regions in Ge n-MOSFET as the geometry scaling proceeds. This letter has investigated a combination of ion implantation of Sb in Ge and subsequent laser annealing, which resulted in highly activated Sb beyond 10(20) cm(-3). Well-behaved Sb-doped n(+) /p Ge diode I-V characteristics have been demonstrated combined with TEM, SIMS, and spreading resistance profiling characterization.