期刊
OPTICS EXPRESS
卷 19, 期 27, 页码 25866-25872出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.19.025866
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资金
- U.S. Government through APIC (Advanced Photonic Integrated Circuits)
- National Science Foundation [DGE-0645962]
- Stanford Graduate Fellowship
- Fonds Quebecois de la Recherche sur la Nature et les Technologies Master's Research Scholarship
This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+) doping reduces the required injected carrier density for population inversion by over a factor of 60. We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um. (C) 2011 Optical Society of America
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