Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy

Published 2011 View Full Article

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Title
Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 1, Pages 011111
Publisher
AIP Publishing
Online
2011-01-07
DOI
10.1063/1.3534785
References
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