Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory Applications

Published 2010 View Full Article

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Title
Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory Applications
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 2, Pages 370-375
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-12-15
DOI
10.1109/ted.2010.2090883

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