Electrical conductivity in oxygen-deficient phases of tantalum pentoxide from first-principles calculations

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

(2012) Feng Miao et al.   ACS Nano

Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

(2012) I. Goldfarb et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

(2012) Seisuke Nigo et al.   JOURNAL OF APPLIED PHYSICS

Lattice electrical resistivity of magnetic bcc iron from first-principles calculations

(2012) Dario Alfè et al.   PHYSICAL REVIEW B

Transport properties of HfO2−xbased resistive-switching memories

(2012) Zhongrui Wang et al.   PHYSICAL REVIEW B

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Spectromicroscopy of tantalum oxide memristors

(2011) John Paul Strachan et al.   APPLIED PHYSICS LETTERS

Probing the atomic structure of amorphous Ta2O5 coatings

(2011) R. Bassiri et al.   APPLIED PHYSICS LETTERS

Effect of vacancy-type oxygen deficiency on electronic structure in amorphous alumina

(2011) Hiroyoshi Momida et al.   APPLIED PHYSICS LETTERS

Electronic structure of δ-Ta2O5 with oxygen vacancy: ab initio calculations and comparison with experiment

(2011) Maxim V. Ivanov et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Electrical and thermal conductivity of liquid sodium from first-principles calculations

(2011) Monica Pozzo et al.   PHYSICAL REVIEW B

First-principles studies of Ta2O5polymorphs

(2011) Yu-Ning Wu et al.   PHYSICAL REVIEW B

Orientational ordering of interstitial atoms and martensite formation in dilute Fe-based solid solutions

(2011) A. Udyansky et al.   PHYSICAL REVIEW B

Self-elongated growth of nanopores in annealed amorphous Ta2O5 films

(2011) R. Nakamura et al.   SCRIPTA MATERIALIA

Ta2O5 polymorphs: Structural motifs and dielectric constant from first principles

(2010) Wanda Andreoni et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

(2010) Seong-Geon Park et al.   IEEE ELECTRON DEVICE LETTERS

Controlling conductance statistics of quantum wires by driving ac fields

(2010) Víctor A. Gopar et al.   PHYSICAL REVIEW B

Diffusion and electrical conductivity in water at ultrahigh pressures

(2010) Martin French et al.   PHYSICAL REVIEW B

First-principles study of the mechanical and optical properties of amorphous hydrogenated silicon and silicon-rich silicon oxide

(2010) Robert J. Bondi et al.   PHYSICAL REVIEW B

Hybrid functional studies of the oxygen vacancy inTiO2

(2010) A. Janotti et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic

(2009) Qiangfei Xia et al.   NANO LETTERS

How We Found The Missing Memristor

(2008) R. Williams   IEEE SPECTRUM

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE