Observing and measuring strain in nanostructures and devices with transmission electron microscopy
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Observing and measuring strain in nanostructures and devices with transmission electron microscopy
Authors
Keywords
-
Journal
MRS BULLETIN
Volume 39, Issue 02, Pages 138-146
Publisher
Cambridge University Press (CUP)
Online
2014-02-12
DOI
10.1557/mrs.2014.4
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Strain mapping of Si devices with stress memorization processing
- (2013) J. Bruley et al. APPLIED PHYSICS LETTERS
- Dynamic scattering theory for dark-field electron holography of 3D strain fields
- (2013) Axel Lubk et al. ULTRAMICROSCOPY
- Dislocation starvation and exhaustion hardening in Mo alloy nanofibers
- (2012) C. Chisholm et al. ACTA MATERIALIA
- Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography
- (2012) David Cooper et al. APPLIED PHYSICS LETTERS
- The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains
- (2012) Thibaud Denneulin et al. JOURNAL OF APPLIED PHYSICS
- Investigation of Strain and Thin Film Relaxation in GexSi1−x/Si Strained-Layer Superlattice by Dark-Field Electron Holography
- (2012) Zhifeng Wang et al. MATERIALS TRANSACTIONS
- Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy
- (2012) Knut Müller et al. MICROSCOPY AND MICROANALYSIS
- Approaching the ideal elastic limit of metallic glasses
- (2012) Lin Tian et al. Nature Communications
- Characterization of channel strain evolution upon the silicidation of recessed source/drain Si1−xGex structures
- (2011) S.-W. Kim et al. APPLIED PHYSICS LETTERS
- Visualizing the Behavior of Dislocations—Seeing is Believing
- (2011) Ian M. Robertson et al. MRS BULLETIN
- Quantitative In Situ Mechanical Testing in Electron Microscopes
- (2011) M. Legros et al. MRS BULLETIN
- Mechanics and Dynamics of the Strain-Induced M1–M2 Structural Phase Transition in Individual VO2Nanowires
- (2011) Hua Guo et al. NANO LETTERS
- Source Truncation and Exhaustion: Insights from Quantitative in situ TEM Tensile Testing
- (2011) D. Kiener et al. NANO LETTERS
- Evaluation of two-dimensional strain distribution by STEM/NBD
- (2011) Fumihiko Uesugi et al. ULTRAMICROSCOPY
- Dark-field electron holography for the measurement of geometric phase
- (2011) M.J. Hÿtch et al. ULTRAMICROSCOPY
- Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography
- (2010) David Cooper et al. APPLIED PHYSICS LETTERS
- Practical and Reproducible Mapping of Strains in Si Devices Using Geometric Phase Analysis of Annular Dark-Field Images From Scanning Transmission Electron Microscopy
- (2010) Jayhoon Chung et al. IEEE ELECTRON DEVICE LETTERS
- Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography
- (2009) Florian Hüe et al. APPLIED PHYSICS LETTERS
- Improved precision in strain measurement using nanobeam electron diffraction
- (2009) A. Béché et al. APPLIED PHYSICS LETTERS
- Electron diffraction with ten nanometer beam size for strain analysis of nanodevices
- (2008) A. Armigliato et al. APPLIED PHYSICS LETTERS
- Local strain measurement in a strain-engineered complementary metal-oxide-semiconductor device by geometrical phase analysis in the transmission electron microscope
- (2008) Jayhoon Chung et al. APPLIED PHYSICS LETTERS
- Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain
- (2008) J. P. Liu et al. APPLIED PHYSICS LETTERS
- Nanoscale holographic interferometry for strain measurements in electronic devices
- (2008) Martin Hÿtch et al. NATURE
- Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy
- (2008) Florian Hüe et al. PHYSICAL REVIEW LETTERS
- Study of strained-silicon channel metal–oxide–semiconductor field effect transistors by large angle convergent-beam electron diffraction
- (2008) H.H. Liu et al. ULTRAMICROSCOPY
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now