Observing and measuring strain in nanostructures and devices with transmission electron microscopy

Strain mapping of Si devices with stress memorization processing

(2013) J. Bruley et al.   APPLIED PHYSICS LETTERS

Dynamic scattering theory for dark-field electron holography of 3D strain fields

(2013) Axel Lubk et al.   ULTRAMICROSCOPY

Dislocation starvation and exhaustion hardening in Mo alloy nanofibers

(2012) C. Chisholm et al.   ACTA MATERIALIA

Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

(2012) David Cooper et al.   APPLIED PHYSICS LETTERS

The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains

(2012) Thibaud Denneulin et al.   JOURNAL OF APPLIED PHYSICS

Investigation of Strain and Thin Film Relaxation in GexSi1−x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

(2012) Zhifeng Wang et al.   MATERIALS TRANSACTIONS

Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy

(2012) Knut Müller et al.   MICROSCOPY AND MICROANALYSIS

Approaching the ideal elastic limit of metallic glasses

(2012) Lin Tian et al.   Nature Communications

Characterization of channel strain evolution upon the silicidation of recessed source/drain Si1−xGex structures

(2011) S.-W. Kim et al.   APPLIED PHYSICS LETTERS

Visualizing the Behavior of Dislocations—Seeing is Believing

(2011) Ian M. Robertson et al.   MRS BULLETIN

Quantitative In Situ Mechanical Testing in Electron Microscopes

(2011) M. Legros et al.   MRS BULLETIN

Mechanics and Dynamics of the Strain-Induced M1–M2 Structural Phase Transition in Individual VO2Nanowires

(2011) Hua Guo et al.   NANO LETTERS

Source Truncation and Exhaustion: Insights from Quantitative in situ TEM Tensile Testing

(2011) D. Kiener et al.   NANO LETTERS

Evaluation of two-dimensional strain distribution by STEM/NBD

(2011) Fumihiko Uesugi et al.   ULTRAMICROSCOPY

Dark-field electron holography for the measurement of geometric phase

(2011) M.J. Hÿtch et al.   ULTRAMICROSCOPY

Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography

(2010) David Cooper et al.   APPLIED PHYSICS LETTERS

Practical and Reproducible Mapping of Strains in Si Devices Using Geometric Phase Analysis of Annular Dark-Field Images From Scanning Transmission Electron Microscopy

(2010) Jayhoon Chung et al.   IEEE ELECTRON DEVICE LETTERS

Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography

(2009) Florian Hüe et al.   APPLIED PHYSICS LETTERS

Improved precision in strain measurement using nanobeam electron diffraction

(2009) A. Béché et al.   APPLIED PHYSICS LETTERS

Electron diffraction with ten nanometer beam size for strain analysis of nanodevices

(2008) A. Armigliato et al.   APPLIED PHYSICS LETTERS

Local strain measurement in a strain-engineered complementary metal-oxide-semiconductor device by geometrical phase analysis in the transmission electron microscope

(2008) Jayhoon Chung et al.   APPLIED PHYSICS LETTERS

Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

(2008) J. P. Liu et al.   APPLIED PHYSICS LETTERS

Nanoscale holographic interferometry for strain measurements in electronic devices

(2008) Martin Hÿtch et al.   NATURE

Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy

(2008) Florian Hüe et al.   PHYSICAL REVIEW LETTERS

Study of strained-silicon channel metal–oxide–semiconductor field effect transistors by large angle convergent-beam electron diffraction

(2008) H.H. Liu et al.   ULTRAMICROSCOPY