Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

Published 2008 View Full Article

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Title
Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 22, Pages 221912
Publisher
AIP Publishing
Online
2008-12-06
DOI
10.1063/1.3040323
References
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