Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator

Published 2010 View Full Article

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Title
Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 7, Pages 074503
Publisher
AIP Publishing
Online
2010-04-09
DOI
10.1063/1.3369160
References
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