An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed
出版年份 2015 全文链接
标题
An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 106, Issue 16, Pages 163501
出版商
AIP Publishing
发表日期
2015-04-22
DOI
10.1063/1.4918649
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Proposal of a Hysteresis-Free Zero Subthreshold Swing Field-Effect Transistor
- (2014) Ankit Jain et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor
- (2014) Ankit Jain et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature
- (2014) Daniel J. R. Appleby et al. NANO LETTERS
- Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure
- (2014) Weiwei Gao et al. NANO LETTERS
- Effective Nanometer Airgap of NEMS Devices Using Negative Capacitance of Ferroelectric Materials
- (2014) Muhammad Masuduzzaman et al. NANO LETTERS
- Three-Terminal Nanoelectromechanical Field Effect Transistor with Abrupt Subthreshold Slope
- (2014) Ji-Hun Kim et al. NANO LETTERS
- Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor
- (2012) Giovanni A. Salvatore et al. APPLIED PHYSICS LETTERS
- Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
- (2011) Asif Islam Khan et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Tunnel field-effect transistors as energy-efficient electronic switches
- (2011) Adrian M. Ionescu et al. NATURE
- Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors
- (2010) A. Cano et al. APPLIED PHYSICS LETTERS
- In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor
- (2010) Thomas N. Theis et al. PROCEEDINGS OF THE IEEE
- Low-Voltage Tunnel Transistors for Beyond CMOS Logic
- (2010) Alan C. Seabaugh et al. PROCEEDINGS OF THE IEEE
- A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance
- (2008) Eng-Huat Toh et al. IEEE ELECTRON DEVICE LETTERS
- Negative capacitance to the rescue?
- (2008) Victor V. Zhirnov et al. Nature Nanotechnology
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
- (2007) Sayeef Salahuddin et al. NANO LETTERS
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