Influence of channel-deposition conditions and gate insulators on performance and stability of top-gate IGZO transparent thin-film transistors

The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors

(2009) Jaeseob Lee et al.   APPLIED PHYSICS LETTERS

Self-Aligned Top-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors

(2009) Cheng-Han Wu et al.   Journal of Display Technology

a-InGaZnO thin-film transistors for AMOLEDs: Electrical stability and pixel-circuit simulation

(2009) Charlene Chen et al.   Journal of the Society for Information Display

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

(2008) Hsing-Hung Hsieh et al.   APPLIED PHYSICS LETTERS

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

Trap densities in amorphous-InGaZnO4 thin-film transistors

(2008) Mutsumi Kimura et al.   APPLIED PHYSICS LETTERS

Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

(2008) Jin-Seong Park et al.   APPLIED PHYSICS LETTERS